Effect of Bi deficiency on grain alignment of BiPb-2223 thin film fabricated using rf sputtering process and on critical current density properties

AKSAN M. A., ALTIN S., YAKINCI M. C., GÜLDESTE A., BALCİ Y.

MATERIALS SCIENCE AND TECHNOLOGY, cilt.27, sa.1, ss.314-319, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 27 Sayı: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1179/026708309x12506933873549
  • Dergi Adı: MATERIALS SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.314-319
  • İnönü Üniversitesi Adresli: Evet

Özet

In the present study, thin films prepared as a function of the Bi concentration in the BiPbSrCaCuO system were synthesised. Thin films were fabricated using radio frequency sputtering method. Crystal structure of the films fabricated was determined from X-ray diffraction measurements. The crystal orientation was analysed by X-ray pole figure and in-plane alignment. Both X-ray diffraction and pole figure analysis revealed that crystallinity in the films decreased significantly with decreasing Bi concentration in the system. A systematic decrease in the superconducting transition temperature and hole concentration per CuO plane was obtained with decreasing Bi concentration. The J(c) values of the films were calculated using Bean formula. It exhibits a significant dependence on the magnetic field and temperature. It was found that J(c) decreased sharply with increasing applied magnetic field. The highest J(c) value was found to be 1.06 x 10(6) A cm(-2) at 10 K, which corresponded to the best flux pinning among the films fabricated.