Hydrogen detection and electrical properties of titanium silicate Schottky diode fabricated by RF-magnetron sputtering method
International Journal of Hydrogen Energy, vol.144, pp.738-745, 2025 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 144
- Publication Date: 2025
- Doi Number: 10.1016/j.ijhydene.2025.03.135
- Journal Name: International Journal of Hydrogen Energy
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Artic & Antarctic Regions, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Environment Index, INSPEC
- Page Numbers: pp.738-745
- Keywords: Electrical characterization, Hydrogen sensor, Perovskite like layers, RF-Magnetron sputtering, Scheelite-type structure, TiSiO4
- Inonu University Affiliated: Yes
Abstract
In this study, the electrical characterization of Schottky contact produced by coating TiSiO4 from the perovskite like layered family on p and n type Si by using RF-magnetron sputtering method was investigated depending on gas atmosphere and temperature. The morphological structure of the TiSiO4 thin film was examined by XRD analysis, FE-SEM images, and EDX spectrum. According to AFM images, the average roughness was found to be 0.811 nm. Temperature dependent I–V and AC characteristics of p-Si/TiSiO4 and n-Si/TiSiO4 devices were measured under dry air flow. In addition, frequency dependent C–V measurements of the devices were performed to investigate the capacitance properties of the scheelite-type interface. Also, the sensor response obtained with this device was as high as 267.7. Hydrogen sensing properties of p-Si/TiSiO4/Pt structure were investigated depending on concentration, temperature and interference gases. Electrical parameters with p type Si provided better results. The p-Si/TiSiO4/Pt sensor device showed Schottky behavior at low temperatures, but the device changed to ohmic behavior with increasing temperature.