Molecular design of POSS core star polyimides as a route to low-kappa dielectric materials

SEÇKİN T., Koeytepe S., ADIGUEZEL H. İ.

MATERIALS CHEMISTRY AND PHYSICS, cilt.112, sa.3, ss.1040-1046, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 112 Sayı: 3
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.matchemphys.2008.07.017
  • Dergi Adı: MATERIALS CHEMISTRY AND PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1040-1046
  • Anahtar Kelimeler: Chemical synthesis, Inorganic compounds, Electron microscopy, Dielectric properties, OLIGOMERIC SILSESQUIOXANE NANOCOMPOSITES, ELECTRON-BEAM LITHOGRAPHY, POLYHEDRAL OLIGOSILSESQUIOXANE, PRECISION SYNTHESIS, BUILDING-BLOCKS, POLYMER, FILMS
  • İnönü Üniversitesi Adresli: Evet

Özet

Star polyimides incorporating the polyhedralsilsesquioxane (POSS-NH2) unit were prepared by in situ curing of polyamic acid macromolecules with amino POSS, octa (aminopropylsilsesquioxane), for the molecular-level design of low dielectric constant (low-kappa) materials that can be used to manufacture integrated circuits. Octameric POSS-NH2 having restricted rotation by multiple point attachment to the polyimide backbone is shown to introduce free volume into the films, thereby lowering their dielectric constants. A process for synthesizing POSS-polyimide star nanocomposites is reported, comprising a step forming porous-type POSS and subsequent step with polyimide precursor. The POSS-NH2 containing polyimides exhibit a number of desirable properties including low-water absorption and high thermal stability. Systematic studies demonstrate that proper insertion of POSS into a polyimide backbone can give rise to a reduction in the material's dielectric constant while also improving its mechanical and thermal properties. (C) 2008 Elsevier B.V. All rights reserved.