INFRARED-ABSORPTION IN THICK-FILM RESISTORS


ULUG B., ULUG A., SENER E.

JOURNAL OF MATERIALS SCIENCE, vol.30, no.13, pp.3346-3350, 1995 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 13
  • Publication Date: 1995
  • Doi Number: 10.1007/bf00349878
  • Journal Name: JOURNAL OF MATERIALS SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.3346-3350
  • Inonu University Affiliated: No

Abstract

Infrared absorption in polymer and glass-based thick film resistors has been measured between 400 and 1500 cm(-1). Sam pie structures are discussed on the basis of X-ray, Fourier transform-infrared and resistance-temperature data. It is shown that in polymer-based thick film resistors, the particulate phase is mostly responsible for the infrared absorption between 400 and 900 cm(-1), whereas the infrared absorption at higher wave numbers is related to the continuous phase. In glass-based thick film resistors, absorption is mostly determined by the highly doped glass. The results indicate that thick film resistors can be used as an absorbent coating in the 400-1500 cm(-1) region by suitable selection of the continuous and particulate phases.